Diode, IGBT. MOSFET & SCR Modules

Key Features

• Very low VCE (sat) 1.5V (typ.)
• Maximum Junction Temperature of 175
• Short circuit withstand time 5micro seconds
• Positive temperature coefficient in VCE (sat)
• Very tight parameter distribution
• High ruggedness, temperature-stable behavior
• Very high switching speed
• Low Electro Magnetic Interference
• Very soft and fast recovery anti-parallel Emitter Controlled HE diode
• Pb-free lead plating
• RoHS compliant